Gallium Nitride (GaN) is emerging as a replacement for pure silicon which has reached its maturity in semiconductor devices and GaN is one of the crucial materials (which falls under III-V compounds) in the robustly growing field of ‘compound semiconductor materials’. GaN power semiconductors, which are relatively new compared to GaN opto-semiconductors, surpassed the latter within a very short span of time, with its market revenues increasing at a CAGR of more than 60% for the period of 2012 to 2022. The various properties of GaN (such as wider bandgap, high breakdown voltage, larger critical electric field, and higher thermal conductivity) allow GaN-based devices to operate at higher voltages and high switching frequencies, to handle higher power density, and to offer enhanced power efficiency than pure silicon devices.
Major ones among GaN power semiconductor devices with robust demand are diodes, rectifiers and HEMTs (in power discretes), MMICs and RFICs (in power ICs). Among opto-semiconductor devices, GaN LEDs have stable demand in high-brightness & ultra-high brightness lighting applications. Among power discretes & power ICs, power discretes hold the larger share in revenues, with power ICs quickly catching up with a higher CAGR (more than 75% for revenues in the period of 2012 to 2022). In the smallest scale of size, GaN high-electron mobility transistors (HEMTs) are the most advanced & sophisticated discretes till date in the total GaN power transistors market, whose size exceeds $4 billion as of 2012
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